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MBM29F033C-70 - 32M (4M x 8) BIT FLASH MEMORY

This page provides the datasheet information for the MBM29F033C-70, a member of the MBM29F033C 32M (4M x 8) BIT FLASH MEMORY family.

Datasheet Summary

Features

  • Single 5.0 V read, write, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection.
  • 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type).
  • Minimum 100,000 write/erase cycles.
  • High performance 70 ns maximum access time.
  • Sector erase architecture Uniform sectors of 64K bytes each Any c.

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Datasheet preview – MBM29F033C-70

Datasheet Details

Part number MBM29F033C-70
Manufacturer Fujitsu
File Size 478.32 KB
Description 32M (4M x 8) BIT FLASH MEMORY
Datasheet download datasheet MBM29F033C-70 Datasheet
Additional preview pages of the MBM29F033C-70 datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 32M (4M × 8) BIT DS05-20869-3E MBM29F033C-70/-90/-12 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 write/erase cycles • High performance 70 ns maximum access time • Sector erase architecture Uniform sectors of 64K bytes each Any combination of sectors can be erased.
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