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MBM29LV008BA-70 - 8M (1M x 8) BIT FLASH MEMORY

This page provides the datasheet information for the MBM29LV008BA-70, a member of the MBM29LV008BA 8M (1M x 8) BIT FLASH MEMORY family.

Datasheet Summary

Features

  • Single 3.0 V read, program, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN.
  • Normal Bend Type, PTR.
  • Reversed Bend Type).
  • Minimum 100,000 program/erase cycles.
  • High performance 70 ns maximum access time.
  • Sector erase architecture One 16K byte, two 8K bytes,.

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Datasheet preview – MBM29LV008BA-70

Datasheet Details

Part number MBM29LV008BA-70
Manufacturer Fujitsu
File Size 439.28 KB
Description 8M (1M x 8) BIT FLASH MEMORY
Datasheet download datasheet MBM29LV008BA-70 Datasheet
Additional preview pages of the MBM29LV008BA-70 datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8M (1M × 8) BIT DS05-20858-4E MBM29LV008TA-70/-90/-12/MBM29LV008BA-70/-90/-12 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes Any combination of sectors can be concurrently erased.
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