MBM29LV016B-90 Overview
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20855-4E MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12.
MBM29LV016B-90 Key Features
- Single 3.0 V read, program and erase Minimizes system level power requirements
- patible with JEDEC-standard mands Uses same software mands as E2PROMs
- patible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend
- Minimum 100,000 program/erase cycles
- High performance
- Sector erase architecture
- Boot Code Sector Architecture T = Top sector B = Bottom sector
- Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
- Embedded programTM Algorithms Automatically programs and verifies data at specified address
- Data Poll