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MBM29LV016T-12 - 16M (2M x 8) BIT FLASH MEMORY

This page provides the datasheet information for the MBM29LV016T-12, a member of the MBM29LV016B 16M (2M x 8) BIT FLASH MEMORY family.

Datasheet Summary

Features

  • Single 3.0 V read, program and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type).
  • Minimum 100,000 program/erase cycles.
  • High performance 80 ns maximum access time.
  • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and t.

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Datasheet preview – MBM29LV016T-12

Datasheet Details

Part number MBM29LV016T-12
Manufacturer Fujitsu
File Size 600.85 KB
Description 16M (2M x 8) BIT FLASH MEMORY
Datasheet download datasheet MBM29LV016T-12 Datasheet
Additional preview pages of the MBM29LV016T-12 datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20855-4E MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased.
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