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MBM29LV080A-90 - 8M (1M x 8) BIT FLASH MEMORY

This page provides the datasheet information for the MBM29LV080A-90, a member of the MBM29LV080A 8M (1M x 8) BIT FLASH MEMORY family.

Datasheet Summary

Features

  • Address specification is not necessary during command sequence.
  • Single 3.0 V read, program and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type).
  • Minimum 100,000 program/erase cycles s.

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Datasheet preview – MBM29LV080A-90

Datasheet Details

Part number MBM29LV080A-90
Manufacturer Fujitsu
File Size 400.15 KB
Description 8M (1M x 8) BIT FLASH MEMORY
Datasheet download datasheet MBM29LV080A-90 Datasheet
Additional preview pages of the MBM29LV080A-90 datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8M (1M × 8) BIT MBM29LV080A-70/-90/-12 DS05-20870-4E s FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles s PRODUCT LINE UP Part No. Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max.
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