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MBM29LV650UE-12 - 64M (4M x 16) BIT FLASH MEMORY

This page provides the datasheet information for the MBM29LV650UE-12, a member of the MBM29LV650UE 64M (4M x 16) BIT FLASH MEMORY family.

Datasheet Summary

Description

The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each.

device is designed to be programmed in system with the standard system 3.0 V VCC supply.

5.0 V VCC are not required for write or erase operations.

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Datasheet preview – MBM29LV650UE-12

Datasheet Details

Part number MBM29LV650UE-12
Manufacturer Fujitsu
File Size 625.44 KB
Description 64M (4M x 16) BIT FLASH MEMORY
Datasheet download datasheet MBM29LV650UE-12 Datasheet
Additional preview pages of the MBM29LV650UE-12 datasheet.

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29LV650UE/651UE -90/12 DS05-20882-2E s DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan- dard. Commands are written to the command register using standard microprocessor write timings.
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