DESCRIPTION
12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE-UP Part No. Ordering Part No. VCC = 3.3 V VCC = 3.0 V +0.3 V −0.3 V +0.6 V −0.3 V MBM29PL3200TE/BE 70 70 25 70 25 90 90 35 90 35 Max. Random Address Access Time (ns) Max. Page Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) s PACKAGES 90-pin plastic SSOP 84-ball plastic FBGA (FPT-90P-M01) (BGA-84P-M01) MBM29PL3200TE/BE70/90 (Continued) The device provides truly high performance non-volatile Flash memory solution. The device offers fast page access times of 25 ns and 35 ns with random access times of 70 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the device has separate chip enable (CE), write enable (WE) and output enable (OE) controls. The page size is 8 words or 4 double words. The device is command set compatible with JEDEC standard E2PROMs.
Fujitsu
