Download MBM29SL160TD-10 Datasheet PDF
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MBM29SL160TD-10 Description

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT DS05-20877-1E MBM29SL160TD-10/-12/MBM29SL160BD-10/-12.

MBM29SL160TD-10 Key Features

  • Single 1.8 V read, program, and erase Minimizes system level power requirements
  • patible with JEDEC-standard mands Uses same software mands as E2PROMs
  • patible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN
  • Normal Bend Type, PFTR
  • Reversed Bend Type) 48-ball FBGA (Package suffix: PBT)
  • Minimum 100,000 program/erase cycles
  • High performance
  • Sector erase architecture
  • Boot Code Sector Architecture T = Top sector B = Bottom sector
  • One Time Protect (OTP) region 256 Byte of OTP, accessible through a new “OTP Enable” mand sequence Factory se