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MBM29SL160TD-12 - 16M (2M x 8/1M x 16) BIT FLASH MEMORY

Download the MBM29SL160TD-12 datasheet PDF. This datasheet also covers the MBM29SL160TD variant, as both devices belong to the same 16m (2m x 8/1m x 16) bit flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Single 1.8 V read, program, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN.
  • Normal Bend Type, PFTR.
  • Reversed Bend Type) 48-ball FBGA (Package suffix: PBT).
  • Minimum 100,000 program/erase cycles.
  • High performance 100 ns maximum access time.
  • Sector erase ar.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29SL160TD_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT DS05-20877-1E MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 s FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 100 ns maximum access time • Sector erase architecture Eight 4K word and thirty one 32K word sectors in word mode Eight 8K byte and thirty one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase.