DESCRIPTION
12.0 V Vpp and 5.0 V Vcc are not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINEUP Part No. Ordering Part Number Suffix VCC (V) Max Random Address Access Time (ns) Max Page Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) 70 3.0 to 3.6 70 25 70 25 MBM29XL12DF 80 2.7 to 3.1 80 30 80 30 s PACKAGES 90-pin plastic SSOP 96-ball plastic FBGA (FPT-90P-M01) (BGA-96P-M02) MBM29XL12DF-70/80 (Continued) The device provides truly high performance non-volatile Flash memory solution. The device offers fast page access times of 25 ns and 30 ns with random access times of 70 ns and 80 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The page size is 8 words or 4 double words. The dual operation function provides simultaneous operation by dividing the memory space into four banks.
Fujitsu
