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GLT41316 - 64K x 16 CMOS DYNAMIC RAM

This page provides the datasheet information for the GLT41316, a member of the GLT41316-G 64K x 16 CMOS DYNAMIC RAM family.

Datasheet Summary

Description

The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory.

WORD WRITE access cycles via two WE pins.

The GLT41316 has symmetric address and accepts 256-cycle refresh in 4ms interval.

Features

  • : ∗ 65,536 words by 16 bits organization. ∗ Fast access time and cycle time. ∗ Dual WE Input. ∗ Low power dissipation. ∗ Read-Modify-Write, RAS -Only Refresh, CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability. ∗ 256 refresh cycles per 4ms. ∗ Available in 40-pin 400 mil SOJ,and 40/44 pin TSOP (II). ∗ Single 5.0V±10% Power Supply. ∗ All inputs and Outputs are TTL compatible. ∗ Fast Page Mode operation.

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Datasheet preview – GLT41316

Datasheet Details

Part number GLT41316
Manufacturer G-Link Technology
File Size 1.45 MB
Description 64K x 16 CMOS DYNAMIC RAM
Datasheet download datasheet GLT41316 Datasheet
Additional preview pages of the GLT41316 datasheet.

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Full PDF Text Transcription

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G-LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : ∗ 65,536 words by 16 bits organization. ∗ Fast access time and cycle time. ∗ Dual WE Input. ∗ Low power dissipation. ∗ Read-Modify-Write, RAS -Only Refresh, CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability. ∗ 256 refresh cycles per 4ms. ∗ Available in 40-pin 400 mil SOJ,and 40/44 pin TSOP (II). ∗ Single 5.0V±10% Power Supply. ∗ All inputs and Outputs are TTL compatible. ∗ Fast Page Mode operation. Description : The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and WORD WRITE access cycles via two WE pins. The GLT41316 has symmetric address and accepts 256-cycle refresh in 4ms interval.
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