GD electronics 2SC2839
NPN Transistor
2SC2839 Specifications
- Max Collector Current : 30mA
- Terminals : 3
- Collector Emitter Voltage : 20V
- Max Power Dissipation : 150mW
- Max Operating Temp : 125°C
Source:
Octopart
FEATURES
123 3. BASE High fT and small Cre(fT=320MHZ typ, Cre=0.95pF typ).MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5V IC Collector Current –Continuous 30 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 30 Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CEO IC=1mA, IB=0 V(BR)EBO IE=100μA, IC=0 20 5 Collector cut-off current ICBO VCB=10V, IE=0 Emitter cut-off current IEBO VEB=4V, IC=0 DC current gain hFE VCE=6V, IC=1mA 60 Transition frequency fT VCE=6V, IC=1mA 200 Reverse Transfer Capacitance Cre VCB=6V, f=1MHz 0.7 TYP 320 0.95 MAX UNIT V V V 0.1 μA 0.1 μA 320 MHz 1.3 pF Base-to-Coll...