• Part: 2SC2839
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: GD electronics
  • Size: 780.64 KB
Download 2SC2839 Datasheet PDF
GD electronics
2SC2839
Features 3. BASE — High f T and small Cre(f T=320MHZ typ, Cre=0.95p F typ). MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5V IC Collector Current - Continuous 30 m A PC Collector Power Dissipation 400 m W TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CEO IC=1m A, IB=0 V(BR)EBO IE=100μA, IC=0 20 5 Collector cut-off...