D84CQ1 Overview
~D~~ FIELD EFFECT POWER TRANSISTOR IRF720,721 D84CQ2,Q1 3 AMPERES 400, 350 VOLTS RDS(ON) =1.8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters,...
D84CQ1 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low inputcapacitance
- Reduced drive requirement