D84DQ2 Overview
~D~[¥~ FIELD EFFECT POWER TRANSISTOR IRF730,731 D84DQ2,Q1 5.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters,...
D84DQ2 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- High transconductance
- Low input capacitance
- Reduced drive requirement
- Excellent thermal stability