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D84DQ2 - FIELD EFFECT POWER TRANSISTOR

Datasheet Summary

Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature o Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

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Datasheet preview – D84DQ2

Datasheet Details

Part number D84DQ2
Manufacturer GE
File Size 198.29 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet D84DQ2 Datasheet
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~D~[¥~ FIELD EFFECT POWER TRANSISTOR IRF730,731 D84DQ2,Q1 5.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
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