D84EN2 Datasheet | GE

~o~[p~ FIELD EFFECT POWER TRANSISTOR IRF640,641 D84EN2,M2 18 AMPERES 200, 150 VOLTS ROS(ON) =0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features - Polysilicon gate - Improved stability and reliability -...