D86DN2 Overview
~D~[?~ FIELD EFFECT POWER TRANSISTOR IRF230,231 D86DN2,M2 9.0 AMPERES 200,150 VOLTS ROS(ON} = 0.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability, This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters,...
D86DN2 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement