D86EQ1 Overview
~ffi1D~ [P~lF FIELD EFFECT POWER TRANSISTOR IRF340,341 D86EQ2,Q1 10 AMPERES 400, 350 VOLTS ROS(ON) =0.55 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies,...
D86EQ1 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement