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D88FN2 - FIELD EFFECT POWER TRANSISTOR

Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • . Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

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Datasheet preview – D88FN2

Datasheet Details

Part number D88FN2
Manufacturer GE
File Size 194.93 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet D88FN2 Datasheet
Additional preview pages of the D88FN2 datasheet.

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Full PDF Text Transcription

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~o~~LF FIELD EFFECT POWER TRANSISTOR IRF~250,251 D88FN2!M2 30 AMPERES 200, 150 VOLTS ROS(ON) =0.085 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the. extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness •.
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