• Part: IGT6E10
  • Manufacturer: GE
  • Size: 291.90 KB
Download IGT6E10 Datasheet PDF
IGT6E10 datasheet preview
IGT6E10 page 2
Page 2
IGT6E10 page 3
Page 3

IGT6E10 Key Features

  • Low VCE(SAT)
  • 2.5V typ @ 10A
  • Ultra-fast turn-on
  • 150 ns typical
  • Polysilicon MOS gate
  • Voltage controlled turn onloff
  • High current handling -10 amps @ 100°C
  • 55 to 150
  • 55 to 150
  • IGT6E10

Related GE Datasheets

Part Number Description
IGT6E11 Insulated Gate Bipolar Transistor
IGT6E20 Insulated Gate Bipolar Transistor
IGT6E21 Insulated Gate Bipolar Transistor
IGT6D10 Insulated Gate Bipolar Transistor
IGT6D11 Insulated Gate Bipolar Transistor