IGT6E10
Overview
- Low VCE(SAT) - 2.5V typ @ 10A
- Ultra-fast turn-on - 150 ns typical
- Polysilicon MOS gate - Voltage controlled turn onloff
- High current handling -10 amps @ 100°C
| Part | IGT6E10 |
|---|---|
| Description | Insulated Gate Bipolar Transistor |
| Category | Transistor |
| Manufacturer | GE |
| Size | 291.90 KB |