IGT8D21 Key Features
- Low VCE(SAT)
- 2..5V typ @ 20A
- Ultra-fast turn-on -150 ns typical
- Polysilicon MOS gate
- Voltage controlled turn on/off
- High current handling
- 20 amps @ 90° C
- ] _ C+±J/~
- 55 to 150
- 55 to 150
- Part: IGT8D21
- Manufacturer: GE
- Size: 285.71 KB
Related GE Datasheets
| Part Number | Description |
|---|---|
| IGT8D20 | Insulated Gate Bipolar Transistor |
| IGT8E20 | Insulated Gate Bipolar Transistor |
| IGT8E21 | Insulated Gate Bipolar Transistor |
| IGT4D10 | Insulated Gate Bipolar Transistor |
| IGT4D11 | Insulated Gate Bipolar Transistor |
IGT8D21 Description
mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV. This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similarto bipolar transistors.