IRF613 - FIELD EFFECT POWER TRANSISTOR

Download the IRF613 datasheet PDF. This datasheet also covers the IRF612 variant, as both devices belong to the same field effect power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

📥 Download Datasheet

IRF613 field effect power transistor by GE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRF612-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRF613
Manufacturer	GE
File Size	190.89 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRF613 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRF613	N-Channel Mosfet Transistor	Inchange Semiconductor
IRF613	N-Channel Power MOSFET	Fairchild Semiconductor
IRF610	N-Channel Mosfet Transistor	Inchange Semiconductor
IRF610	N-Channel Power MOSFET	Intersil Corporation
IRF610	N-Channel Power MOSFET	Fairchild Semiconductor

Other Datasheets by GE

Part Number	Description
IRF612	FIELD EFFECT POWER TRANSISTOR
IRF632	FIELD EFFECT POWER TRANSISTOR
IRF633	FIELD EFFECT POWER TRANSISTOR
IRF642	FIELD EFFECT POWER TRANSISTOR
IRF643	FIELD EFFECT POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DO D[]~[F~ FIELD EFFECT POWER TRANSISTOR IRF612,613 2.0 AMPERES 200, 150 VOLTS ROS(ON) = 2.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.