IRF743 Datasheet Field Effect Power Transistor

Manufacturer: GE

Overview: ~D~[F~lf FIELD EFFECT POWER TRANSISTOR IRF742,743 SAMPERES 400, 350 VOLTS ROS(ON) =O.SO n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRF743
Manufacturer	GE
File Size	194.99 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRF743 IRF742 Datasheet (PDF)

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

IRF743 Distributor

Similar Datasheet

Part Number	Description	Manufacturer
IRF743	N-Channel Power MOSFET	Fairchild Semiconductor
IRF743	N-Channel Power MOSFETs	ART CHIP
IRF7433	HEXFET Power MOSFET	International Rectifier
IRF7433PBF	Power MOSFET	International Rectifier

More Datasheets from GE

Part Number	Description
IRF742	FIELD EFFECT POWER TRANSISTOR
IRF712	FIELD EFFECT POWER TRANSISTOR
IRF713	FIELD EFFECT POWER TRANSISTOR
IRF612	FIELD EFFECT POWER TRANSISTOR
IRF613	FIELD EFFECT POWER TRANSISTOR
IRF632	FIELD EFFECT POWER TRANSISTOR
IRF633	FIELD EFFECT POWER TRANSISTOR
IRF642	FIELD EFFECT POWER TRANSISTOR
IRF643	FIELD EFFECT POWER TRANSISTOR
IRF832	FIELD EFFECT POWER TRANSISTOR