IRF743 - FIELD EFFECT POWER TRANSISTOR

Download the IRF743 datasheet PDF. This datasheet also covers the IRF742 variant, as both devices belong to the same field effect power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

📥 Download Datasheet

IRF743 field effect power transistor by GE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRF742-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRF743
Manufacturer	GE
File Size	194.99 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRF743 Datasheet

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Other Datasheets by GE

Part Number	Description
IRF742	FIELD EFFECT POWER TRANSISTOR
IRF712	FIELD EFFECT POWER TRANSISTOR
IRF713	FIELD EFFECT POWER TRANSISTOR
IRF612	FIELD EFFECT POWER TRANSISTOR
IRF613	FIELD EFFECT POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

~D~[F~lf FIELD EFFECT POWER TRANSISTOR IRF742,743 SAMPERES 400, 350 VOLTS ROS(ON) =O.SO n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.