IRF832 Datasheet Field Effect Power Transistor

Manufacturer: GE

Overview: ~D~~~U FIELD EFFECT POWER TRANSISTOR IRF832,833 4.0 AMPERES 500, 450 VOLTS ROS(ON) = 2.0 .0. This series of N~Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

Datasheet Details

Part number	IRF832
Manufacturer	GE
File Size	201.68 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRF832-GE.pdf

Key Features

Polysilicon gate -Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

IRF832 Distributor

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