Datasheet4U Logo Datasheet4U.com

IRFD1Z2 Datasheet Field Effect Power Transistor

Manufacturer: GE

Overview: ~D~·~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

Datasheet Details

Part number IRFD1Z2
Manufacturer GE
File Size 184.54 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet IRFD1Z2-GE.pdf

Key Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Harris Semiconductor Logo IRFD1Z2 N-Channel MOSFET Harris Semiconductor

More Datasheets from GE

Part Number Description
IRFD1Z0 FIELD EFFECT POWER TRANSISTOR
IRFD1Z1 FIELD EFFECT POWER TRANSISTOR
IRFD1Z3 FIELD EFFECT POWER TRANSISTOR
IRFD110 FIELD EFFECT POWER TRANSISTOR
IRFD111 FIELD EFFECT POWER TRANSISTOR
IRFD120 FIELD EFFECT POWER TRANSISTOR
IRFD121 FIELD EFFECT POWER TRANSISTOR
IRFD210 FIELD EFFECT POWER TRANSISTOR
IRFD211 FIELD EFFECT POWER TRANSISTOR
IRFD212 FIELD EFFECT POWER TRANSISTOR

IRFD1Z2 Distributor