IRFD222
Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement
- Excellent thermal stability
- Ease of paralleling
N-CHANNEL
CASE STYLE 4-PIN DIP
DIMENSIONS ARE...
