IRFF211 Overview
~D~~ IRFF210,211 FIELD EFFECT POWER TRANSISTOR 2.2 AMPERES 200, 150 VOLTS ROS(ON) =1.5 il Preliminary This series of N-Channel Enhancement-mode' Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies,...
IRFF211 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement