IRFF322 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

IRFF322 field effect power transistor by GE - Datasheet Preview

Datasheet Details

Part number	IRFF322
Manufacturer	GE
File Size	189.39 KB
Description	FIELD EFFECT POWER TRANSISTOR
Download	IRFF322 Download (PDF)

Overview

~D~~ IRFF322,323 FIELD EFFECT PONER TRANSISTOR 2.0 AMPERES 400, 350 VOLTS .

ROS(ON) = 2.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

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