IRFF332 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

IRFF332 field effect power transistor by GE - Datasheet Preview

Datasheet Details

Part number	IRFF332
Manufacturer	GE
File Size	194.49 KB
Description	FIELD EFFECT POWER TRANSISTOR
Download	IRFF332 Download (PDF)

Overview

~o~[f~ IRFF332,333 FIELD EFFECT POVVER TRANSISTOR 3.0 AMPERES 400, 350 VOLTS ROS(ON) = 1.5!} Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

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