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MA6116 - RADIATION HARD 2048 x 8 BIT STATIC RAM

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Features

  • s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 110ns (MA6116) and 85ns (MA6216) Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU.

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Datasheet Details

Part number MA6116
Manufacturer GEC PLESSEY
File Size 168.55 KB
Description RADIATION HARD 2048 x 8 BIT STATIC RAM
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MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The MA6216 is manufactured using 2.5µm technology resulting in faster performance. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state.
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