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MA6116 - RADIATION HARD 2048 x 8 BIT STATIC RAM

Key Features

  • s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 110ns (MA6116) and 85ns (MA6216) Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU.

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Datasheet Details

Part number MA6116
Manufacturer GEC PLESSEY
File Size 168.55 KB
Description RADIATION HARD 2048 x 8 BIT STATIC RAM
Datasheet download datasheet MA6116 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The MA6216 is manufactured using 2.5µm technology resulting in faster performance. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state.