• Part: GE4953
  • Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • Category: Transistor
  • Manufacturer: GEMOS
  • Size: 268.11 KB
GE4953 Datasheet (PDF) Download
GEMOS
GE4953

Description

The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

Key Features

  • VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package