GEMOS GE4953
The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).| Part No. | GE4953 |
|---|---|
| Datasheet | GE4953 Download |
| Manufacturer | GEMOS |
| Description | P-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
APPLICATIONS
● Battery protection● Load switch
● Power management Schematic diagram Marking and pin Assignment SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 4953 Device GE4953 Package SOP-8 Reel Size Ø330mm Tape width 12mm ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ，TSTG Limit -30 ±20 -4.9 -30 2.0 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5
ELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) Parameter Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Curr...
