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GE4953 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

25V).

Features

  • VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number GE4953
Manufacturer GEMOS
File Size 268.11 KB
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet GE4953 Datasheet

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Full PDF Text Transcription

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GEMOS MOS FIELD EFFECT TRANSISTOR GE4953 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). GENERAL FEATURES ● VDS = -30V,ID = -4.9A RDS(ON) < 85mΩ @ VGS=-4.
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