120N03
120N03 is MOSFET manufactured by GFD.
DESCRIPTION
The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanety of applications .
30V
RDS(ON)
2.5mΩ 120A
GENERAL FEATURES
- VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:2.5mΩ )
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stabilty and unifomity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Ordering Information
PART NUMBER PACKAGE BRAND
TO-220
OGFD
.goford.cn TEL：0755-86350980 FAX：0755-86350963
Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
Symbol
Parameter
Units
IDM PD VGS EAS TJ and TSTG
Drain-to-Source Voltage Continuous Drain Current Drain...
