3205TR - N-Channel MOSFETS

Datasheet Summary

Description

The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RoHS Compliant.
Low ON Resistance.
Low Gate Charge.
Peak Current vs Pulse Width Curve.
Inductive Switching Curves.

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3205TR N-Channel MOSFETS by GFD - Datasheet Preview — Datasheet preview – 3205TR

Datasheet Details

Part number	3205TR
Manufacturer	GFD
File Size	435.55 KB
Description	N-Channel MOSFETS
Datasheet	3205TR Datasheet
Additional preview pages of the 3205TR datasheet.

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N-Channel MOSFETS DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves Applications • witching Application Systems • Inverter systems • DC Motor Control 3205TR VDS 55V RDS(ON) ID 6.

Published: Mar 12, 2019 |