3205TR Datasheet PDF

GFD 3205TR

3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.