GFD 740
This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.| Part No. | 740 |
|---|---|
| Datasheet | 740 Download |
| Manufacturer | GFD |
| Description | 400V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 740 VDSS RDS(ON) ID 400V 0.55Ω 10.5AFEATURES
● 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V● Low gate charge ( typical 30nC)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 740 TO-220 0GFD TEL：0755-86350980 FAX：0755-86350963 740
ABSOLUTE MAXIMUM RATINGS
TC = 25°Cunless otherwise noted Symbol Parameter 740 740F VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 400 10.5 6.6 10.5 6.6 IDM Drain Current- Pulsed (Note 1) 42 42 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) 378 Units V A A A V mJ EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD TJ, TSTG TL Power Dissipation (TC = 25°C) Derate above 25°C Operating and Storage Temperature Range Maxi...
