740
DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
VDSS RDS(ON)
400V 0.55Ω
10.5A
Features
- 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V
- Low gate charge ( typical 30n C)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
TO-220
0GFD
.goford.cn TEL：0755-86350980 FAX：0755-86350963
Absolute Maximum Ratings
TC = 25°Cunless otherwise noted
Symbol
Parameter
740F
VDSS ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
10.5 6.6
10.5 6.6
IDM Drain Current- Pulsed
(Note...
