DESCRIPTION
It can be used in a wide Vanety of applications . 80N03 VDS RDS(ON) ID 30V -- 80A GENERAL FEATURES
VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stabilty and unifomity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability TO-252-2L top view Application Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 80N03 TO-252-2L OGFD TEL：0755-29961262 FAX：0755-29961466 Page 1 GOFORD 80N03 ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted) Symbol Parameter 80N03 Units VDS Drain-to-Source Voltage 30 V Continuous Drain Current ID Drain Current-Continuous(Tc=100℃) 80 50 A IDM Pulsed Drain Current 170 PD Power Dissipation 83 W VGS Gate-to-Source Voltage ± 20 V EAS Single PulseAvalanche Energy 150 mJ TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ Thermal Resistance Symbol RθJC Parameter Junction-to-Case Min.
