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80N03 - MOSFET

General Description

The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

Key Features

  • VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stabilty and unifomity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability TO-252-2L top view.

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Datasheet Details

Part number 80N03
Manufacturer GFD
File Size 2.17 MB
Description MOSFET
Datasheet download datasheet 80N03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 80N03 VDS RDS(ON) ID 30V -- 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 80N03 TO-252-2L OGFD HTTP://www.gofordsemi.