Datasheet Details
| Part number | 0809LD120 |
|---|---|
| Manufacturer | GHZ Technology |
| File Size | 17.11 KB |
| Description | 120 Watt / 28V / 1 Ghz LDMOS FET |
| Download | 0809LD120 Download (PDF) |
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| Part number | 0809LD120 |
|---|---|
| Manufacturer | GHZ Technology |
| File Size | 17.11 KB |
| Description | 120 Watt / 28V / 1 Ghz LDMOS FET |
| Download | 0809LD120 Download (PDF) |
|
|
|
The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz.
The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.
CASE OUTLINE 55QV Common Source ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 300 W .6°C/W 65V ±20V -65 to +200°C +200°C ELECTRICAL CHARACTERISTICS @ 25°C PER SIDE SYMBOL ΒVdss Idss Igss Vgs(th) Vds(on) gFS Crss Coss CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current TEST CONDITIONS Vgs = 0V, Id = 2ma Vds = 28V, Vgs= 0V Vgs = 20V, Vds = 0V Vds = 10V, Id = 100ma Vgs = 10V, Id = 3A Vds = 10V, Id = 3A Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz 2 4 0.7 2.2 5 60 MIN 65 TYP 70 1 1 5 MAX UNITS V A A Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Reverse Transfer Capacitance Output Capacitance This part is input matched.
R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY.
| Part Number | Description |
|---|---|
| 0809LD30 | 30 Watt / 28V / 1 Ghz LDMOS FET |
| 0809LD30P | 30 Watt / 28V / 1 Ghz LDMOS FET |
| 0809LD60 | 60 Watt / 28V / 1 Ghz LDMOS FET |
| 0809LD60P | 60 Watt / 28V / 1 Ghz LDMOS FET |