GENERAL DESCRIPTION
CASE OUTLINE 55QV Common Source ABSOLUTE MAXIMUM RATINGS
Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 300 W .6°C/W 65V ±20V -65 to +200°C +200°C ELECTRICAL CHARACTERISTICS
@ 25°C PER SIDE SYMBOL ΒVdss Idss Igss Vgs(th) Vds(on) gFS Crss Coss CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current TEST CONDITIONS Vgs = 0V, Id = 2ma Vds = 28V, Vgs= 0V Vgs = 20V, Vds = 0V Vds = 10V, Id = 100ma Vgs = 10V, Id = 3A Vds = 10V, Id = 3A Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz 2 4 0.7 2.2 5 60 MIN 65 TYP 70 1 1 5 MAX UNITS V A A Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Reverse Transfer Capacitance Output Capacitance This part is input matched. V V S pF pF FUNCTIONAL CHARACTERISTICS @ 25°C GPS ηd IMD3 Common Source Power Gain Drain Efficie...