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0809LD120 - 120 Watt / 28V / 1 Ghz LDMOS FET

Datasheet Summary

Description

The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz.

The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.

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Datasheet Details

Part number 0809LD120
Manufacturer GHZ Technology
File Size 17.11 KB
Description 120 Watt / 28V / 1 Ghz LDMOS FET
Datasheet download datasheet 0809LD120 Datasheet
Additional preview pages of the 0809LD120 datasheet.

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Other Datasheets by GHZ Technology
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Full PDF Text Transcription

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R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness. CASE OUTLINE 55QV Common Source ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 300 W .
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