GENERAL DESCRIPTION
The 0912-7 is a COMMON BASE bipolar transistor. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55CX, STYLE 1 ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 50 Watts 60 Volts 4.0 Volts 1.0 Amps - 65 to + 150 oC + 200oC ELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces Cob hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency (1090 MHz) Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown Capacitance Collector to Base DC - Current Gain Thermal Resistance TEST CONDITIONS F = 960-1215 MHz Vcc = 50 Volts PW = 10 µsec DF =1% F = 1090 MHz Ie = 10 mA Ic = 20 mA Vcb = 50 V Ic= 100 mA, Vcc= 5V MIN 7 1 8.5 40 10:1 4 60 6.5 10 8 120 3.5 Volts Volts pF o TYP MAX UNITS Watts Watts dB % θjc 2 C/W Note1: At Rated Power Output and pulse conditions.
GHz Technology
