3001
DESCRIPTION
The 3001 is a MON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package.
CASE OUTLINE 55BT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25o C Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 5 Watts
50 Volts 3.5 Volts 0.20 A
- 65 to + 200 o C + 200 o C
..
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 3.0 GHz Vcb = 28 Volts Po = 1 Watts As Above F =3 GHz, Po = 1 W MIN 1.0 7.0 .14 8.5 30 0.2 TYP MAX UNITS Watt Watt d B %
ηc
VSWR1
30:1
BVces BVcbo BVebo Icbo h FE Cob
θjc
Collector to Emitter...
