GHz Technology 3001
The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. The transistor uses a fully hermetic High Temperature Solder Sealed package.- Max Operating Temp : 168°C
- Min Operating Temp : -18°C
Source:
Octopart
| Part No. | 3001 |
|---|---|
| Datasheet | 3001 Download |
| Manufacturer |  GHz Technology |
| Description | Class C Microwave |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. CASE OUTLINE 55BT, STYLE 1ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 5 Watts 50 Volts 3.5 Volts 0.20 A - 65 to + 200 oC + 200 oCELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 3.0 GHz Vcb = 28 Volts Po = 1 Watts As Above F =3 GHz, Po = 1 W MIN 1.0 7.0 .14 8.5 30 0.2 TYP MAX UNITS Watt Watt dB % ηc VSWR1 30:1 BVces BVcbo BVebo Icbo hFE Cob θjc Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance Ic = 10 mA Ic = 1 mA Ie = 1 mA Vcb = 28 Volts 50 45 3.5 0.5 10 35 Volts Volts Volts mA o Vce = 5 V, Ic = 100 mA F = 1 MHz, Vcb = 28 V C/W Issue August 1996 GHz TECHNOLOGY INC.
