Datasheet4U Logo Datasheet4U.com

DME150 - Pulsed Avionics

Description

The DME 150 is a high power COMMON BASE bipolar transistor.

It is designed for pulsed systems in the frequency band 1025-1150 MHz.

The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

📥 Download Datasheet

Datasheet preview – DME150

Datasheet Details

Part number DME150
Manufacturer GHz Technology
File Size 317.63 KB
Description Pulsed Avionics
Datasheet download datasheet DME150 Datasheet
Additional preview pages of the DME150 datasheet.

📁 Similar Datasheet

  • DME10P12K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10P15K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10P18K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10P1K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10P22K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10S12K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10S15K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10S18K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10S1K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
  • DME10S22K-F - Polyester Film Capacitors Metallized Radial Leads (Cornell Dubilier Electronics)
Other Datasheets by GHz Technology

Full PDF Text Transcription

Click to expand full text
DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz www.datasheet4u.com GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and ouput prematch for broadband capabilit. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AY, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 290 Watts 55 Volts 4.
Published: |