DME375A Description
The DME375A is a high power MON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF.
| Part number | DME375A |
|---|---|
| Download | DME375A Datasheet (PDF) |
| File Size | 379.13 KB |
| Manufacturer | GHz Technology |
| Description | Pulsed Avionics |
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| Manufacturer | Part Number | Description |
|---|---|---|
Alpha |
DME375A | Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes |
The DME375A is a high power MON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF.