GENERAL DESCRIPTION
The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AW Style 1 ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation 875 Device Dissipation @25!C2 Maximum Voltage and Current 55 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 4.0 Collector Current (Ic) 30 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A !C !C ELECTRICAL CHARACTERISTICS
@ 25!C SYMBOL Pout Pin Pg "c VSWR1 CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1025 – 1150 MHz Vcc = 50 Volts PW = 10 #sec DF = 1% F = 1090 MHz MIN 375 85 6.5 40 TYP MAX UNITS W W dB % !:1 4.0 55 10 0.2 V V !C/W FUNCTIONAL CHARACTERISTICS @ 25!C BVebo BVces hFE $jc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 20 mA Ic = 25 mA Vce = 5V, Ic = 300 mA NOTE 1: At rated output power and pulse conditions 2.
GHz Technology
