GENERAL DESCRIPTION
The device has gold thin-film metallization for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55KT, STYLE 1 ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 1700 Watts 55 Volts 3.5 Volts 40 Amps - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance TEST CONDITIONS F = 1025-1150 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1090 MHz Ie = 30 mA Ic = 40 mA Ic = 500 mA, Vce = 5 V MIN 500 125 6.0 6.5 35 10:1 3.5 5...
GHz Technology
