GENERAL DESCRIPTION
The ITC1000 is a common base bipolar transistor. The transistor includes input returns for improved output rise time . Low thermal resistance package reduces junction temperature which extends the life time of the product. CASE OUTLINE 55SW, Style 1 Common Base ABSOLUTE MAXIMUM RATINGS
Power Dissipation Device Dissipation1 @25°C (Pd) Thermal Resistance1 (θJC) Voltage and Current Collector-Base Voltage Emitter-Base Voltage Collector Current1 Temperatures Storage Temperature Operating Junction Temperature1 3400 W .08°C/W 65V 3.5V 80A -40 to +150°C +200°C ELECTRICAL CHARACTERISTICS
@ 25°C SYMBOL BVebo2 BVces BVceo2 hFE2 CHARACTERISTICS Emitter-Base Breakdown(open) Collector-Emitter Breakdown(shorted) Collector-Emitter Breakdown (open) DC Current Gain TEST CONDITIONS Ie=50mA Ic=30mA Ic=30mA Ic=5A, Vce=5V MIN 3.5 65 30 20 TYP MAX UNITS V V V β 45 80 FUNCTIONAL CHARACTERISTICS @ 25°C GPB ηc tr VSWR Zin Zout 1 2 Common Base Power Gain Collector Efficiency Rise Time Output...
GHz Technology
