GENERAL DESCRIPTION
The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AT, STYLE 1 ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 220 Watts 55 Volts 3.5 Volts 7.0 Amps - 65 to + 200 oC + 200 oC SEE NOTE BELOW ELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces Cob hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown Capacitance Collector to Base DC - Current Gain Thermal Resistance TEST CONDITIONS F = 960-1215 MHz Vcc = 36 Volts PW = 10 µsec DF = 20% F = 1090 MHz Ie = 25 mA Ic = 25 mA Vcb = 36V Ic = 750 mA, Vce = 5 V MIN 50 10 7.0 40 10:1 3.5 55 20 100 0.8 Vol...
GHz Technology