JTDB25 Datasheet | GHz Technology

DESCRIPTION The JTDB 25 is a high power MON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25o C2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 97 Watts 55 Volts 3.5 Volts 5.0 Amps - 65 to + 200o C + 200o C ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces h FE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 960-1215 MHz Vcc = 36 Volts PW = 10 µsec DF = 40% F = 1090 MHz Ie = 5 m A Ic = 10 m A Ic = 500 m A,Vce = 5 V MIN 25 5.0 7.0 7.5 40 5:1 TYP MAX UNITS Watts Watts d B % θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance 3.5 55 10 1.8 Volts Volts o C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue A, July 1997 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz REMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 .. All Data shown is for operation under the rated pulse conditions. July 1997 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz REMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT...