GENERAL DESCRIPTION
The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 220 Watts 55 Volts 3.5 Volts 8.0 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 960-1215 MHz Vcc = 36 Volts PW = 10 µsec DF = 40% F = 1090 MHz Ie = 30mA Ic = 30 mA Ic = 25 mA, Vce = 5 V MIN 75 15 7.0 7.5 40 3:1 TYP MAX UNITS Watts Watts dB % θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance 3.5 55 10 0.8 Volts Volts o C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue A, July 1997 GHz TECHNOLOGY INC.
GHz Technology
