GENERAL DESCRIPTION
It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure ruggedness and high reliability. CASE OUTLINE 55HV, Style 2 ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 270 Watts 65 Volts 4.0 Volts 20 A - 65 to +150 oC +150 oC ELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 175 MHz Vcc = 28 Volts MIN 100 7.0 Po=100W, F=175 MHz 14 8.5 60 20 TYP MAX UNITS Watts Watts dB % 30:1 BVebo BVces BVceo Cob hFE θjc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Output Capacitance DC - Current Gain Thermal Resistance Ie = 5 mA Ic = 100 mA Ie = 50 mA Vcb = 28 V, F = 1 MHz Vce = 5 V, Ic = 1 A 4.0 65 33 220 10 .65 Volts Volts Volts pF o C/W Issue August 1996 GHz TECHNOLOGY INC.
GHz Technology
