Galaxy Century Microelectronics 1SS355
Silicon Epitaxial Planar Diode
| Part No. | 1SS355 |
|---|---|
| Datasheet | 1SS355 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Diode |
| Buy | Stock & Price |
FEATURES
● Small Surface Mounting Type: SOD-323● High Speed switching.
● High Reliability. Pb Lead-free Production specification 1SS355
APPLICATIONS
● High speed switching ORDERING INFORMATION Type No. Marking 1SS355 A SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Non-Repetitive Peak reverse voltage VRM 90 DC Reverse Voltage VR 80 Average Rectified Output Current IO 100 Surge current (1s) Isurge 500 Power Dissipation PD 200 Junction temperature Tj 150 Storage temperature TSTG -55 to+150 Unit V V mA mA mW ℃ ℃ B001 Rev.A 1 Production specification Silicon Epitaxial Planar Diode 1SS355ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Forward voltage Reverse current Capacitance between terminals Reverse Recovery Time Symbol VF IR CT Min. Typ. Max. Unit 1.2 V 0.1 μA 3 pF Conditions IF=100mA VR=80V VR=0.
