Galaxy Century Microelectronics 2SA1037
Silicon Epitaxial Planar Transistor
FEATURES
● Excellent hFE Linearity.● Complments the 2SC2412. Pb Lead-free
APPLICATIONS
● Ideal for low-voltage operation. Production specification 2SA1037 ORDERING INFORMATION Type No. Marking 2SA1037 FQ/FR/FS SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -60 -50 -6 -150 200 -55 to +150 Units V V V mA mW ℃ C013 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SA1037ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage