2SA733
FEATURES
- Excellent h FE Linearity.
- Power dissipation：PD=250m W.
- High h FE.
Pb
Lead-free
APPLICATIONS
- Designed for use in driver stage of amplifier.
ORDERING INFORMATION
Type No.
Marking
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous
-60 -50 -5 -100
PC Tj,Tstg
Collector Dissipation Junction and Storage Temperature
250 -55 to +150
Units V V V m A m W ℃
C009 Rev.A
.gmesemi.
Production specification
Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0
-60
Collector-emitter breakdown voltage V(BR)CEO IC=-1m A,IB=0
-50
Emi...
