Galaxy Century Microelectronics 2SB1375
Silicon PNP Transistor
| Part No. | 2SB1375 |
|---|---|
| Datasheet | 2SB1375 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb● High Power Dissipation:PC=25W(TC=25℃) Lead-free
● Complements the 2SD2012. Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -60 V -7 V -3 A -0.5 A 2.0 W 25 -55 to +150 ℃ X015 Rev.A 1 Production specification Silicon PNP Triple Diffused Type 2SB1375
ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Breakdown Voltage V(BR)CEO IC=-50mA,IB=0 -60 V Collector Cut-off Current ICBO VCB=-60V,IE=0 -10 μA Emit
