Datasheet Summary
Silicon PNP Triple Diffused Type
Features
- Low Saturation Voltage:VCE(sat)=-1.5V(max.)
(IC/IB=-2A/-0.2A)
Pb
- High Power Dissipation:PC=25W(TC=25℃) Lead-free
- plements the 2SD2012.
Production specification
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO VEBO IC IB PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Ta=25℃ Tc=25℃
Junction and Storage Temperature
-60 V
-7 V
-3 A
-0.5 A 2.0
W 25 -55 to +150 ℃
X015...
