Galaxy Century Microelectronics 2SB709A
Silicon Epitaxial Planar Transistor
| Part No. | 2SB709A |
|---|---|
| Datasheet | 2SB709A Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High forward current transfer ratio hFE.● Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A
APPLICATIONS
● For general amplification complementary to 2SD601A. ORDERING INFORMATION Type No. Marking 2SB709A BQ1/BR1/BS1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO ICP IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak collector Current Collector Current Collector Dissipation Junction and Storage Temperature -45 -45 -7 -200 -100 200 -55 to +150 Units V V V mA mA mW ℃ C015 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SB709AELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX
