Datasheet4U Logo Datasheet4U.com

2SB709A - Silicon Epitaxial Planar Transistor

Key Features

  • High forward current transfer ratio hFE.
  • Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE.  Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A APPLICATIONS  For general amplification complementary to 2SD601A. ORDERING INFORMATION Type No. Marking 2SB709A BQ1/BR1/BS1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO ICP IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak collector Current Collector Current Collector Dissipation Junction and Storage Temperature -45 -45 -7 -200 -100 200 -55 to +150 Units V V V mA mA mW ℃ C015 Rev.A www.gmesemi.